Flash memory element and manufacturing method thereof

摘要

The present invention provides a flash memory element and its manufacturing method having improved overall memory characteristics by constituting a double-gate element for improving the scaling down characteristic of flash memory element. A flash memory element comprises: a first oxide film formed on a surface of a silicon substrate; a fin active area vertically formed on the first oxide film; a gate tunneling oxide film formed on the fin active area; a floating electrode formed on the surfaces of the gate tunneling oxide film and the first oxide film; a inter-gates oxide film formed on the surface of the floating electrode; and a control electrode formed on the surface of the inter-gates oxide film. With the above double-gate flash memory structure, a flash memory element in the present invention improves the scaling down characteristic and the programming and retention characteristic of a flash memory element.