发明名称 METAL POLISHING
摘要 <p>The present invention provides a process and liquid composition for selectively removing a metal film from a patterned substrate. The process, which is useful in the manufacture of semiconductor devices and circuits, comprises chemically reacting the metal film with a liquid and then removing the reaction product from the metal surfaces using a polishing pad. The present invention further provides a process to polish a metal surface in separate stages and at different rates by changing the chemical composition of the liquid.</p>
申请公布号 WO2003018252(A2) 申请公布日期 2003.03.06
申请号 US2002024851 申请日期 2002.08.06
申请人 发明人
分类号 主分类号
代理机构 代理人
主权项
地址