发明名称 |
Epitaxial edge termination for silicon carbide Schottky devices and methods of fabricating silicon carbide devices incorporating same |
摘要 |
Edge termination for a silicon carbide Schottky rectifier is provided by including a silicon carbide epitaxial region on a voltage blocking layer of the Schottky rectifier and adjacent a Schottky contact of the silicon carbide Schottky rectifier. The silicon carbide epitaxial layer may have a thickness and a doping level so as to provide a charge in the silicon carbide epitaxial region based on the surface doping of the blocking layer. The silicon carbide epitaxial region may form a non-ohmic contact with the Schottky contact. The silicon carbide epitaxial region may have a width of from about 1.5 to about 5 times the thickness of the blocking layer. Schottky rectifiers with such edge termination and methods of fabricating such edge termination and such rectifiers are also provided. Such methods may also advantageously improve the performance of the resulting devices and may simplify the fabrication process.
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申请公布号 |
US2003045045(A1) |
申请公布日期 |
2003.03.06 |
申请号 |
US20020264135 |
申请日期 |
2002.10.03 |
申请人 |
SINGH RANBIR |
发明人 |
SINGH RANBIR |
分类号 |
C04B35/565;H01L29/24;H01L29/47;H01L29/868;H01L29/872;(IPC1-7):H01L21/823 |
主分类号 |
C04B35/565 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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