| 摘要 |
PURPOSE: A field effect transistor formed on an insulating substrate and its integrated circuit are provided to operate at both of positive and negative potentials with respect to a conventional body potential. CONSTITUTION: A field effect transistor employs a structure in which a body contact region(131) is interposed between source regions(121) in order to realize a higher maximum allowable voltage with a smaller area. In order to realize the bipolar transistor with an increased channel width without external wirings for fixing a body potential, a structure of a transistor is also formed in which a drain/source region(111,121), a first gate electrode, a portion where a body contact region is arranged with a second region having a first conductivity type, a second gate electrode, and a source/drain region are arranged.
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