METHOD FOR FABRICATING RF PASSIVE DEVICE USING SILICON SUBSTRATE

摘要

PURPOSE: A method for fabricating an RF passive device using a silicon substrate is provided to reduce largely a fabricating cost by forming the passive device with the silicon substrate. CONSTITUTION: A p-type silicon substrate is prepared. A cleaning process for the p-type silicon substrate is performed to remove various impurities including metallic ions and a natural oxide layer. A dielectric layer is deposited by using an RF magnetron sputtering method. At this time, the dielectric layer is a single dielectric layer or a double dielectric layer. The temperature of the deposition process is 500 degrees centigrade when MgO is used as the dielectric layer. The temperature of the deposition process is 600 degrees centigrade when BST is used as the dielectric layer. A thermal process is performed under the temperature of 600 degrees centigrade during 10 minutes after the dielectric layer is formed.