发明名称 |
EXPOSURE MASK FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE: An exposure mask for manufacturing a semiconductor device is provided to be capable of preventing variation of pattern critical dimension caused by flare noise. CONSTITUTION: An exposure mask(20) comprises a cell mask region(11) corresponding to a cell region(1) and a light shield region(12) corresponding to a scribe line(SL). The exposure mask(20) further includes a no-chrome region(14) for isolation between the cell mask region(11) and the light shield region(12). The light shield region(12) corresponding to the scribe line(SL) is treated by chrome, so that the variation of critical dimension in cell patterns caused by the flare noise is prevented in the scribe line(SL).
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申请公布号 |
KR20030018751(A) |
申请公布日期 |
2003.03.06 |
申请号 |
KR20010053281 |
申请日期 |
2001.08.31 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
EOM, JAE DU;KANG, CHUN SU |
分类号 |
H01L21/027;(IPC1-7):H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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