METHOD FOR FABRICATING MASK ROM

摘要

PURPOSE: A method for fabricating a mask ROM is provided to form a flat cell type mask ROM by performing a gate doping process and a salicide process used for a logic process. CONSTITUTION: A buried layer(216) is formed on a substrate(200). A gate insulating layer(222) is formed on the substrate(200) having the buried layer(216) in order to form a gate material layer. The gate material layer is etched by performing a photo lithography process. The first gate(225) is formed on the memory cell array region by etching the gate material layer. An insulating pattern is formed on the entire face of the substrate(200). The second gate is formed on a peripheral region by etching the gate material layer. A low resistant layer is formed at the first gate and a source/drain is formed at both sides of the second gate by doping impurities on the substrate(200) including the first and the second gates.