| 摘要 |
PURPOSE: A method for manufacturing a bipolar device is provided to form a uniform thickness of a base thin film and to prevent impurity ratio and distribution of germanium from being non-uniform, by using a loading effect in manufacturing the base thin film including silicon and germanium. CONSTITUTION: A collector(115) is formed a substrate including a buried collector(111), having a protruded island shape and connected to the buried collector. A collector insulating layer(117) is deposited on the substrate having the collector. The protruded portion of the collector insulating layer covering the substrate is eliminated. The first semiconductor electrode layer(121) is deposited on the substrate including the collector protruded over the collector insulating layer, and is planarized to make the surface of the substrate exposed to only the collector composed of a semiconductor material and the first semiconductor electrode layer. A base thin film including either one of silicon or silicon-germanium is grown on the substrate where only the semiconductor material is exposed.
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