发明名称 |
ZnOSSe compound semiconductor, integrated circuit using the semiconductor and method of manufacturing the semiconductor and the integrated circuit |
摘要 |
A light-emitting device includes a silicon substrate, a ZnOSSe layer provided on the silicon substrate that is lattice-matched to the silicon substrate, and a separate confinement heterostructure light-emitting layer that is provided on the ZnOSSe layer and includes an active layer and upper and lower clad layers.
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申请公布号 |
US2003042851(A1) |
申请公布日期 |
2003.03.06 |
申请号 |
US20020234160 |
申请日期 |
2002.09.05 |
申请人 |
NATIONAL INST. OF ADVANCED IND. SCIENCE AND TECH. |
发明人 |
IWATA KAKUYA;NIKI SHIGERU;FONS PAUL;YAMADA AKIMASA;MATSUBARA KOJI |
分类号 |
C30B29/48;H01S5/02;H01S5/026;H01S5/327;(IPC1-7):H01J1/62;H01J63/04 |
主分类号 |
C30B29/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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