| 摘要 |
A method for creating a lateral overflow drain, anti-blooming structure in a charge coupled device, the method includes the steps of providing a substrate of a first conductivity type for the charge coupled device; providing a layer of oxide abutting the substrate; providing a layer of nitride abutting the oxide; providing a hard mask abutting the nitride with an etched away portion having a dimension which substantially equals a combined dimension of heavily doped first and second conductivity type subsequently implanted regions in the substrate; placing photoresist in a portion of the etched away portion which remaining etched away portion includes a dimension substantially equal to the first conductivity type subsequently implanted region in the substrate; implanting ions of the first conductivity type through the remaining etched away portion and into the substrate for creating a channel stop; removing the photoresist and placing a second photoresist layer in a portion of the etched away portion wherein a remaining etched away portion includes a dimension substantially equal to the second conductivity type subsequently implanted region in the substrate and wherein the remaining etched away portion is adjacent the implanted channel stop; implanting ions of the second conductivity type through the remaining etched away portion and into the substrate for forming the lateral overflow drain; etching a portion of the nitride so that a peripheral portion of the etched away portion is substantially aligned with a peripheral portion of the second conductivity type; growing a thick field oxide in the etched away portion of the nitride layer so that the lateral overflow drain is covered by the thick field oxide layer.
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