| 摘要 |
A method of forming a TFT-LCD device with a rough pixel electrode is disclosed. The method comprises the following steps. First, a first passivation layer is formed on the transparent insulator substrate to cover the transistor. The first passivation layer is etched to form contact holes therein to expose a source structure and a drain structure of the transistor. A pixel electrode is formed on the first passivation layer and filled into the contact holes to connect electrically to the drain structure. A second passivation layer is formed on the first passivation layer and the pixel electrode to cover uniformly the transistor for planarization. Then a lithography procedure is done to etch the second passivation layer to make surfaces thereof rough.
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