| 发明名称 |
Method for manufacturing semiconductor integrated circuit device |
| 摘要 |
Peeling between a bonding pad and an insulating film which underlies the bonding pad is to be prevented. A laminate film constituted mainly by W which is higher in mechanical strength than a wiring layer using an Al alloy film as a main conductive layer and than a bonding pad, is formed within an aperture formed in silicon oxide films and is interposed between the wiring line and the bonding pad.
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| 申请公布号 |
US2003045088(A1) |
申请公布日期 |
2003.03.06 |
| 申请号 |
US20020195716 |
申请日期 |
2002.07.16 |
| 申请人 |
HITACHI, LTD. |
发明人 |
IMAI TOSHINORI;FUJIWARA TSUYOSHI;SHIRAISHI TOMOHIRO;ASHIHARA HIROSHI;YOSHIDA MASAAKI |
| 分类号 |
H01L23/52;H01L21/3205;H01L21/60;H01L21/768;H01L23/485;(IPC1-7):H01L21/476;H01L21/44 |
主分类号 |
H01L23/52 |
| 代理机构 |
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