发明名称 |
Method for fabricating III-V Group compound semiconductor |
摘要 |
A method for fabricating a GaN-based III-V Group compound semiconductor is provided that utilizes a regrowth method based on the HVPE method to form a second III-V Group compound semiconductor layer having a flat surface on a first III-V Group compound semiconductor layer formed with a mask layer. The method uses a mixed carrier gas of hydrogen gas and nitrogen gas to control formation of a facet group including at least the {33-62} facet by the regrowth, and conducting the regrowth until a plane parallel to the surface of the first III-V Group compound semiconductor layer is once annihilated, thereby fabricating a III-V Group compound semiconductor having low dislocation density.
|
申请公布号 |
US2003045017(A1) |
申请公布日期 |
2003.03.06 |
申请号 |
US20020105238 |
申请日期 |
2002.03.26 |
申请人 |
HIRAMATSU KAZUMASA;MIYAKE HIDETO;BOHYAMA SHINYA;MAEDA TAKAYOSHI;IYECHIKA YASUSHI |
发明人 |
HIRAMATSU KAZUMASA;MIYAKE HIDETO;BOHYAMA SHINYA;MAEDA TAKAYOSHI;IYECHIKA YASUSHI |
分类号 |
C30B25/02;H01L21/20;H01L21/205;H01L33/32;(IPC1-7):H01L21/00 |
主分类号 |
C30B25/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|