发明名称 Semiconductor memory device capable of testing data line redundancy replacement circuit
摘要 In a shift switch circuit for replacing a data line, a transmission gate circuit connecting node N2 corresponding to ith write data line to node N4 corresponding to ith read data line is provided. An operation of the shift switch circuit can be confirmed according to whether or not an output corresponding to provided data input signal D<i> is observed as data output signal Q<i>. Preferably, a transmission gate connecting i+1th write data line to an output data line is further provided, in order to further ensure operation confirmation. When a fuse circuit is set to replace a data line, ratio of successful chip repairing will be higher.
申请公布号 US2003043648(A1) 申请公布日期 2003.03.06
申请号 US20020121870 申请日期 2002.04.15
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 TSUJI TAKAHARU
分类号 G01R31/28;G01R31/3185;G11C11/401;G11C29/00;G11C29/02;G11C29/04;(IPC1-7):G11C7/00 主分类号 G01R31/28
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