PRODUCTION METHOD FOR SEMICONDUCTOR SUBSTRATE AND PRODUCTION METHOD FOR FIELD EFFECT TRANSISTOR AND SEMICONDUCTOR SUBSTRATE AND FIELD EFFECT TRANSISTOR

摘要

A production method for a semiconductor substrate and a production method for a field effect transistor and a semiconductor substrate and a field effect transistor, wherein a penetration dislocation density is low, a surface roughness is small, and a deterioration in surface or interface roughness at heat treating during a device production step or the like can be prevented. A production method for a semiconductor substrate having an SiGe layers 2, 3 formed on an Si substrate 1, comprising the heat treating step of conducting heat treating at temperatures exceeding an epitaxial growth temperature while or after SiGe layers are formed by epitaxial growing, and the polishing step of removing by polishing a surface unevenness produced by the heat treating after the SiGe layers are formed.