发明名称 POWER SOURCE CIRCUIT AND SEMICONDUCTOR DEVICE
摘要 PURPOSE: To provide a power source circuit wherein enlargement of chip area and increase of cost can be prevented, while normal operation is ensured when a voltage higher than or equal to an element withstand voltage is applied. CONSTITUTION: A transistor Tr1 outputs an inputted DC voltage VCH as an internal power source Vo. When the DC voltage VCH turns to an overvoltage, a clamp circuit 1 becomes active and clamps the internal power source Vo at a prescribed voltage. As the result of activation of the clamp circuit 1, a gate voltage control circuit 3 controls a gate voltage of the transistor Tr1 in such a manner that the overvoltage is reduced and supplied as the internal power source Vo.
申请公布号 KR20030019072(A) 申请公布日期 2003.03.06
申请号 KR20020020337 申请日期 2002.04.15
申请人 FUJITSU LIMITED 发明人 ITO HIDENOBU;KAWAMURA HIROSHI;NAKAMICHI HIROTO;SHIMIZU KATSUYA
分类号 H03K17/08;G05F3/26;H03F1/52;(IPC1-7):G11C5/14 主分类号 H03K17/08
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