| 摘要 |
PURPOSE: A method for estimating molecular nitrogen implantation dosage is provided to grow a predetermined thickness of an oxide layer on a process wafer by inputting the predetermined thickness into a relation between a suppression ratio and the dosages of molecular nitrogen such that the suppression ratio is obtained when implanted nitrogen on semiconductor wafers is suppressed. CONSTITUTION: The semiconductor wafers are first implanted with various concentration of molecular nitrogen. The implanted wafers and a non-implanted wafer are subjected to a thermal process to grow the oxide layer. The thickness of the oxide layer on the wafers with various implantation dosage is measured. The suppression ratio is computed from the difference in thickness of the oxide layer between the implanted and non-implanted semiconductor wafers to stand for the thickness variation. The relation between the suppression ratio and the dosages is built.
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