| 摘要 |
In a PECVD (plasma enhanced chemical vapor deposition) apparatus including a reaction chamber; plural susceptors installed inside the reaction chamber and horizontally mounted with a wafer respectively; a heating means for heating the susceptors; a power supply unit installed outside of the reaction chamber; a plasma electrode receiving RF power from the power supply unit, generating and maintaining plasma inside the reaction chamber; and a rotation jet spray having two spray injectors horizontally rotating and supplying gas inside the reaction chamber, a thin film is deposited by supplying BTMSM vapor and oxygen retaining gas through the spray injector, supplying hydrogen retaining gas through the other spray injector and horizontally rotating the spray injectors in the supply. Herein, a pressure in the reaction chamber is in the range of 0.1 Torr~1 Torr, the wafer is heated at 25° C.~400° C., and RF power in the range of 100 W~2000 W is applied.
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