| 摘要 |
<p>A hole serving as part of a connection hole (21) is formed by etching through a second insulation layer (13) consisting of a porous silicon oxide film and through a third insulation layer (14). Then, a second stopper film (20) is used to form a second groove (23) in the third insulation layer (14) by etching. Silicon oxide films on the side walls of the connection hole (21) and the second groove (23) are directly nitrided by using a RLSA type plasma processing device to form a barrier layer (25) consisting of an SiN film. The second stopper film (20) is formed by direct nitriding in the same manner as the barrier layer (25).</p> |
