| 摘要 |
<p>An impurity diffusion layer constituting the source region (15) and the drain region (16) of a pMOS (11) is formed as very shallow as about 50 nm. The very shallow impurity diffusion layer is formed by conducting an anneal process using RLSA plasma after an ion implantation process using a low energy. During an annealing process, silicon atoms only in the vicinity of the surface of a silicon substrate (12) are selectively excited to suppress a depth-direction impurity diffusion.</p> |
