PRODUCTION METHOD AND PRODUCTION DEVICE FOR SEMICONDUCTOR DEVICE
摘要
An impurity diffusion layer constituting the source region (15) and the drain region (16) of a pMOS (11) is formed as very shallow as about 50 nm. The very shallow impurity diffusion layer is formed by conducting an anneal process using RLSA plasma after an ion implantation process using a low energy. During an annealing process, silicon atoms only in the vicinity of the surface of a silicon substrate (12) are selectively excited to suppress a depth−direction impurity diffusion.
申请公布号
WO03019636(A1)
申请公布日期
2003.03.06
申请号
WO2002JP08736
申请日期
2002.08.29
申请人
TOKYO ELECTRON LIMITED;MURAKAWA, SHIGEMI;SATO, SHINICHI;NAKANISHI, TOSHIO