发明名称 |
RESIST MATERIAL AND PATTERNING PROCESS |
摘要 |
PROBLEM TO BE SOLVED: To provide a resist material having both high resolution and high etching resistance and useful in precision microfabrication and to provide a patterning process using the resist material. SOLUTION: The resist material comprises a hydrogenated body of a ring- opened metathesis polymer and a poly(meth)acrylic acid derivative as base resins. |
申请公布号 |
JP2003066612(A) |
申请公布日期 |
2003.03.05 |
申请号 |
JP20020168143 |
申请日期 |
2002.06.10 |
申请人 |
SHIN ETSU CHEM CO LTD |
发明人 |
KOBAYASHI TOMOHIRO;NISHI TSUNEHIRO;WATANABE SATOSHI;KANOU TAKESHI;NAGURA SHIGEHIRO;ISHIHARA TOSHINOBU |
分类号 |
G03F7/039;C08G61/12;H01L21/027 |
主分类号 |
G03F7/039 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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