发明名称 RESIST MATERIAL AND PATTERNING PROCESS
摘要 PROBLEM TO BE SOLVED: To provide a resist material having both high resolution and high etching resistance and useful in precision microfabrication and to provide a patterning process using the resist material. SOLUTION: The resist material comprises a hydrogenated body of a ring- opened metathesis polymer and a poly(meth)acrylic acid derivative as base resins.
申请公布号 JP2003066612(A) 申请公布日期 2003.03.05
申请号 JP20020168143 申请日期 2002.06.10
申请人 SHIN ETSU CHEM CO LTD 发明人 KOBAYASHI TOMOHIRO;NISHI TSUNEHIRO;WATANABE SATOSHI;KANOU TAKESHI;NAGURA SHIGEHIRO;ISHIHARA TOSHINOBU
分类号 G03F7/039;C08G61/12;H01L21/027 主分类号 G03F7/039
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