| 摘要 |
PROBLEM TO BE SOLVED: To allow ultraviolet intensity to be measured accurately at a wide incident angle, to allow remote control, to miniaturize, and to thin a thickness. SOLUTION: This ultraviolet photodetector has an ultraviolet photoreceiving element provided with a photo-semiconductor layer containing at least one or more kind(s) of element(s) selected from the group of Al, Ga and In, and nitrogen, and an electrode, on a substrate, and an end face of the substrate is a photoreceiving face. The ultraviolet photodetector has the ultraviolet photoreceiving element provided with the photo-semiconductor layer containing at least one or more kind(s) of element(s) selected from the group comprising Al, Ga and In, and nitrogen, and the electrode, on the substrate, and the photodetector is provided with a light transmitting member for making light incident into the photo-semiconductor layer. This ultraviolet photodetecting system of the present invention is juxtaposed with the ultraviolet photodetectors.
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