| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin-film transistor substrate for a liquid crystal display which is a low-resistance material and can assure the reliability of contact sections. SOLUTION: A conductive film for gate wiring containing aluminum is laminated on a substrate 10 and a nitride conductive film 200 containing aluminum and nitrogen is continuously laminated by maintaining a vacuum on the upper part thereof to form gate wirings 22, 24 and 26. Next, a gate insulating film 30, a semiconductor layer 40 and nitride contact layers 55 and 56 are successively formed. In succession, conductive materials 601 and 602 for data wiring of an aluminum series and a nitride conductive film 600 are successively laminated to form data wiring 65 and 66. Next, a protective film 70 is laminated and contact holes 74, 76 and 78 are formed. An ITO film is thereafter laminated and pixel electrode, auxiliary gate pads 86 and auxiliary data pads 88 are formed through the nitride conductive films 200 and 600.</p> |
