| 发明名称 |
A semiconductor device and a manufacturing method thereof |
| 摘要 |
<p>A multilayer interconnection structure that offers a fast semiconductor operation is realized by employing copper wiring (35,43), electro migration of which is prevented from occurring by providing a via plug (41) that includes a layer (47) of a high melting-point metal, such as tungsten. <IMAGE></p> |
| 申请公布号 |
EP1289008(A2) |
申请公布日期 |
2003.03.05 |
| 申请号 |
EP20020007245 |
申请日期 |
2002.03.28 |
| 申请人 |
FUJITSU LIMITED |
发明人 |
KITADA, HIDEKI;SHIMIZU, NORIYOSHI;OHTSUKA, NOBUYUKI;OHBA, TAKAYUKI |
| 分类号 |
H01L21/3205;H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L21/768 |
主分类号 |
H01L21/3205 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
