发明名称 SPUTTERING TARGET AND METHOD FOR PRODUCING PHASE SHIFTING MASK BLANK, AND PHASE SHIFTING MASK USING THE SAME
摘要 <p>PROBLEM TO BE SOLVED: To provide a phase shifting mask blank and a phase shifting mask having very excellent chemical resistance by using a material consisting essentially of a metal and a boron-doped silicon as a sputtering target when a phase shifting film is produced by sputtering. SOLUTION: The sputtering target used for forming the translucent regions of a phase shifting mask consists essentially of the metal and the boron-doped silicon.</p>
申请公布号 JP2003066587(A) 申请公布日期 2003.03.05
申请号 JP20010254170 申请日期 2001.08.24
申请人 SHIN ETSU CHEM CO LTD 发明人 TSUKAMOTO TETSUSHI;SHINAGAWA TSUTOMU;INAZUKI SADAOMI;KANEKO HIDEO;WATANABE MASATAKA;OKAZAKI SATOSHI
分类号 C23C14/34;G03F1/32;G03F1/68;H01L21/027;(IPC1-7):G03F1/08 主分类号 C23C14/34
代理机构 代理人
主权项
地址
您可能感兴趣的专利