Process for fabricating of thin nitride- or oxide layers

摘要

Production of thin oxide or nitride layers comprises using a plasma beam produced from a high frequency plasma source (5) to convert the substrate (1) into the corresponding oxide or nitride and adjusting the reaction speed independent of the penetration depth. Preferred Features: The reaction speed is adjusted over the ion stream density of the particle stream or the degree of ionization or dissociation of the particle stream. The energy of the ions is uniform. The process is carried out at less than 10<-2> mbar pressure and at 54-150 degrees C. The substrate material is aluminum, magnesium, gallium, tantalum, zinc, titanium, zirconium, yttrium, nickel, silicon, germanium, boron or carbon.