| 摘要 |
PROBLEM TO BE SOLVED: To enhance a yield of a black film material to reduce a cost, to reduce the number of working proceses, to enhance workability, and to thin a sacrifice layer. SOLUTION: When a metal black film 11 is formed in a finely-worked semiconductor substrate 10 and lifted off by wet-etching using the sacrifice layer to form an infrared-ray absorbing layer in a desired area, the metal black film 11 is formed by injecting ultra micro-fine particulates at a high speed with a gas flow, from a nozzle 6 to the fine-worked semiconductor substrate 10, to be sprayed partially.
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