发明名称 METHOD OF FABRICATING MASTER INFORMATION CARRIER
摘要 <p>PROBLEM TO BE SOLVED: To provide a photomask enabling a high accuracy resist pattern to be formed, a resist pattern forming method using the same, a method of fabricating a component with a thin film and a method of fabricating a master information carrier. SOLUTION: The photomask 101 has light transmissive parts 105 corresponding to a pattern to be transferred to the surface of a resist film 107 coated on the surface of a substrate 106, the rear face side of the photomask 101 is allowed to come into close contact with the surface of the resist film 107 in pattern transfer and the photomask 101 has projections 102 for close contact enclosing the light transmissive parts on the rear face side and a recess 103 for deaeration for evacuating the gas present between the surface of the resist film and the rear face side to the outside. Resist pattern formation is carried out using the photomask and a component with a thin film and a master information carrier are fabricated.</p>
申请公布号 JP2003066591(A) 申请公布日期 2003.03.05
申请号 JP20020077916 申请日期 2002.03.20
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 YANAGI TERUMI;FURUMURA NOBUYUKI;MIYATA KEIZO;ISHIDA TATSURO
分类号 G03F1/60;G03F7/20;G11B5/31;G11B5/84;G11B5/86;H01L21/027;(IPC1-7):G03F1/14 主分类号 G03F1/60
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