发明名称 |
High-frequency circuit device and method for manufacturing the same |
摘要 |
<p>A high-frequency circuit device using a plane antenna is provided which has improved reliability of electrical conduction even when subjected to repeated bending stresses. A film structure of a wiring pattern is constituted by forming a Cu-film layer (6) on an organic substrate (5), and then forming a Ni-plated film (7) and an Au-plated film (8) successively on the Cu-film layer. The Ni-plated film is formed by electrolytic plating. An elongation rate of the Ni-plated film formed by electrolytic plating is 4.9 % at minimum. A thermal shock test proves that the wiring pattern is free from cracks and disconnections. Hence, reliability against repeated bending stresses can be improved. <IMAGE></p> |
申请公布号 |
EP1289352(A2) |
申请公布日期 |
2003.03.05 |
申请号 |
EP20020004245 |
申请日期 |
2002.02.26 |
申请人 |
HITACHI, LTD.;HITACHI CAR ENGINEERING CO., LTD. |
发明人 |
ISONO, TADASHI;NAKAZAWA, TERUMI;OOUCHI, SHIROU;SASADA, YOSHIYUKI;OHBA, MAMORU |
分类号 |
H05K1/09;C25D5/12;C25D5/56;C25D7/00;H01P11/00;H01Q1/38;H01Q13/08;H01Q21/06;H05K1/16;H05K3/00;H05K3/24;(IPC1-7):H05K1/16 |
主分类号 |
H05K1/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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