NITRIDE-BASED III-V GROUP COMPOUND SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING THE SAME, METHOD FOR PRODUCING LIGHT EMITTING DEVICE OF SEMICONDUCTOR AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To suppress the amount of the warping of a substrate below 70 μm when forming the semiconductor layer of a nitride-based III-V group compound on a substrate formed of a substance different from the nitride-based III-group compound. SOLUTION: When the semiconductor layer formed of a nitride-based III-V group compound such as GaN is grown on the substrate such as a sapphire substrate, the thickness x of the substrate is selected so as to satisfy 0=450 μm with respect to the thickness y of the semiconductor layer of the nitride-based III-V group compound. Under the conditions of the maximum dimension D (cm) of the substrate, the amount of warping of 0 (cm), and z=y/x, D is selected so as to satisfy 0 (1-HCZ), providing that C (cm<-1> ) is a proportional constant when the radius ρ (cm) of the curvature of the substrate is expressed to be 1/ρ=CZ.