| 摘要 |
PROBLEM TO BE SOLVED: To obtain a raw material for CVD which uses an inexpensive metal halide compound and has the excellent supply stability and the excellent composition controllability of a raw material, and to provide a method for manufacturing thin film using the same. SOLUTION: The raw material for chemical vapor deposition is a raw material for forming the thin film of a metallic nitride and/or metallic carbide on a base material by chemical vapor deposition process and contains the metal halide compound expressed by MXm and a compound containing cyano group expressed by R(CN)n (in the formula, M represents titanium, zirconium, hafnium, vanadium, niobium or tantalum, (m) represents 4 when M is titanium, zirconium or hafnium and 5 when M is vanadium, niobium or tantalum. X represents a halogen atom, R represents a 2-18C hydrocarbon group and (n) represents 1 or 2).
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