| 摘要 |
There is disclosed a magnetoresistive tunnel junction element comprising a tunnel multilayered film in which a tunnel barrier layer, and a ferromagnetic free layer and a ferromagnetic pinned layer formed to sandwich the tunnel barrier layer therebetween are laminated, wherein a pinning layer for pinning magnetization of the ferromagnetic pinned layer is laminated on the surface of the ferromagnetic pinned layer opposite to the surface thereof contacting the tunnel barrier layer, a bias magnetic field applying layer is formed on the surface of the ferromagnetic free layer opposite to the surface thereof contacting the tunnel barrier layer, the bias magnetic field applying layer is a laminate of a nonmagnetic noble metal layer and an antiferromagnetic layer, and the ferromagnetic free layer is magnetically exchange-coupled to the antiferromagnetic layer via the nonmagnetic noble metal layer so that a bias magnetic field can be applied to the ferromagnetic free layer, and therefore stability of a magnetization rotating operation of the free layer with respect to a magnetic field signal is superior.
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