发明名称 |
Plasma processing apparatus and plasma processing method |
摘要 |
A plasma-assisted processing system has a lifting mechanism capable of vertically moving a microwave power unit and a waveguide to adjust the level of a planar slot antenna disposed on an expanded lower end part of the waveguide. A space extending under the antenna is surrounded by a shielding member. An optical sensor having an array of photosensors is disposed on the outer side of a window formed in the side wall of a vacuum vessel to monitor the lower limit level of a cease region for a plasma (cease level). An ideal distance between the cease level and the antenna is determined beforehand and the level of the antenna is adjusted on the basis of a measured cease level so that the antenna is spaced the ideal distance apart from the cease level. Since the difference between the cease level and a level X0 for the cutoff density of an X-wave is fixed, the level X0 may be monitored instead of the cease level.
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申请公布号 |
US6528752(B1) |
申请公布日期 |
2003.03.04 |
申请号 |
US20000595476 |
申请日期 |
2000.06.16 |
申请人 |
TOKYO ELECTRON LIMITED;YASAKA YASUYOSHI;ANDO MAKOTO;GOTO NAOHISA |
发明人 |
ISHII NOBUO;YASAKA YASUYOSHI;ANDO MAKOTO;GOTO NAOHISA |
分类号 |
H01J37/32;(IPC1-7):B23K10/00 |
主分类号 |
H01J37/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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