发明名称 Semiconductor integrated circuit device having internal supply voltage generating circuit
摘要 In a precharge operation, when an external supply potential is lower than the lower limit determined by a specification, a VDC circuit in a sense amplifier operating voltage generating circuit supplies to a sense power supply line a potential equal to the external supply potential. When the external supply potential is higher than the lower limit determined by the specification, the VDC circuit supplies a potential equal to the lower limit of the external supply potential. Accordingly, a semiconductor integrated circuit device including this circuitry can achieve power savings without decrease in the sensing operation rate and without supply of charges more than necessary to memory cells.
申请公布号 US6529437(B2) 申请公布日期 2003.03.04
申请号 US20010978094 申请日期 2001.10.17
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 KONO TAKASHI
分类号 G11C11/407;G11C5/14;G11C11/409;(IPC1-7):G11C7/00 主分类号 G11C11/407
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