发明名称 Semiconductor memory device and data read method thereof
摘要 A semiconductor memory device includes a memory cell array and a differential amplifying and latching circuit for latching and outputting each of signal pairs output from the memory cell array in case of a first latency operation, and for amplifying a voltage difference of each of the signal pairs output from the memory cell array in case of a second latency operation.
申请公布号 US6529432(B2) 申请公布日期 2003.03.04
申请号 US20020144517 申请日期 2002.05.13
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM BYUNG-CHUL;BAE WON-IL
分类号 G11C11/409;G11C7/06;(IPC1-7):G11C7/00 主分类号 G11C11/409
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