发明名称 |
Optimized reachthrough implant for simultaneously forming an MOS capacitor |
摘要 |
A method of forming a diffusion region in a silicon substrate having low-resistance, acceptable defect density, reliability and process control comprising the steps of: (a) subjecting a silicon substrate to a first ion implantation step, said first ion implantation step being conducted under conditions such that a region of amorphized Si is formed in said silicon substrate; (b) subjecting said silicon substrate containing said region of amorphized Si to a second ion implantation step, said second ion implantation step being carried out by implanting a dopant ion into said silicon substrate under conditions such that the peak of implant of said dopant ion is within the region of amorphized Si; and (c) annealing said silicon substrate under conditions such that said region of amorphized Si is re-crystallized thereby forming a diffusion region in said silicon substrate is provided.
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申请公布号 |
US6528821(B2) |
申请公布日期 |
2003.03.04 |
申请号 |
US20020093932 |
申请日期 |
2002.03.08 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
COOLBAUGH DOUGLAS D.;HARAME DAVID L. |
分类号 |
H01L27/04;H01L21/20;H01L21/265;H01L21/822;H01L29/94;(IPC1-7):H01L29/76 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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