| 摘要 |
A method of forming a metal line in a semiconductor device comprises forming a damascene pattern, forming a diffusion barrier layer, depositing a copper precursor by a spin-on process, forming a thin copper film by a baking process, filling the damascene pattern by a hydrogen reduction annealing process and a force filling process, and then forming a copper line by a chemical mechanical polish method. As such, the method forms a copper line without forming a seed layer by simultaneously performing a hydrogen reduction annealing process and a force filling process, by introducing a spin-on process. Therefore, the method can simplify the process, reduce the manufacturing cost, and easily form a copper line.
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