| 发明名称 |
Method for manufacturing a trench capacitor |
| 摘要 |
A method for manufacturing a trench capacitor uses a low-pressure gas phase doping for forming a buried plate as a capacitor plate. The use of the low-pressure gas phase doping reduces process costs and improves capacitor properties.
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| 申请公布号 |
US6528384(B2) |
申请公布日期 |
2003.03.04 |
| 申请号 |
US20010811800 |
申请日期 |
2001.03.19 |
| 申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
BECKMANN GUSTAV;HAUPT MORITZ;KRASEMANN ANKE;LAMPRECHT ALEXANDRA;OTTENWAELDER DIETMAR;SACHSE JENS-UWE;SCHREMS MARTIN |
| 分类号 |
H01L21/223;H01L21/8242;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/223 |
| 代理机构 |
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