| 摘要 |
A semiconductor device comprises impurity diffusion layers formed in a semiconductor substrate and containing a metal element, whose siliciding activation energy is less than 1.8 eV, at a concentration of more than 1x1011 atoms/cm2 and less than 1x1015 atoms/cm2, an insulating film formed on the semiconductor substrate, contact holes formed in the insulating film on the impurity diffusion layers, and contact plugs formed via the contact holes. Accordingly, there is provided the semiconductor device that has a connection structure between an impurity-containing semiconductor layer and a conductive film and is capable of suppressing a leakage current generated at a contact portion between the impurity diffusion layer and the conductive film.
|
