| 摘要 |
A bipolar transistor compatible with CMOS processes utilizes only a single layer of polysilicon while maintaining the low base resistance associated with conventional double-polysilicon bipolar designs. Dopant is implanted to form the intrinsic base through the same dielectric window in which the polysilicon emitter contact component is later created. Following poly deposition within the window and etch to create the polysilicon emitter contact component, large-angle tilt ion implantation is employed to form a link base between the intrinsic base and a subsequently-formed base contact region. Tilted implantation enables the link base region to extend underneath the edges of the polysilicon emitter contact component, creating a low resistance path between the intrinsic base and the extrinsic base. Fabrication of the device is much simplified over a conventional double-poly transistor, particularly if tilted implantation is already employed in the process flow to form an associated structure such as an LDMOS.
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