发明名称 |
Method for preventing over-erasing of memory cells and flash memory device using the same |
摘要 |
Disclosed herein is an erase method of a flash memory device that comprises discrete first and second erase discrimination periods. An erase operation is carried out using a bulk stepping scheme during the first erase discrimination period while the erase operation is carried out using a fixed bulk voltage during the second erase discrimination period. According to this method, the number of over-erased memory cells caused by the bad erase property is reduced, so that a total erase time of the flash memory device can be reduced and over-erase can be prevented.
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申请公布号 |
US6529413(B2) |
申请公布日期 |
2003.03.04 |
申请号 |
US20010952807 |
申请日期 |
2001.09.13 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE JUNE;LIM YOUNG-HO |
分类号 |
G11C16/02;G11C16/06;G11C16/14;G11C16/16;G11C16/34;(IPC1-7):G11C16/06 |
主分类号 |
G11C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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