发明名称 |
Ferroelectric memory and method for reading the same |
摘要 |
A ferroelectric memory device and method for reading such a device utilize capacitive coupling between a reference circuit and a sense amplifier. The amount of sneak charge canceled from a data bit line depends on the relative capacitances of a coupling capacitor and another capacitor used to integrate sneak charge from a reference bit line. The use of linear-responding components improves stability.
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申请公布号 |
US6529398(B1) |
申请公布日期 |
2003.03.04 |
申请号 |
US20010967495 |
申请日期 |
2001.09.27 |
申请人 |
INTEL CORPORATION |
发明人 |
NAIR RAJENDRAN;CHOW DAVID G. |
分类号 |
G11C11/22;(IPC1-7):G11C11/12 |
主分类号 |
G11C11/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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