| 摘要 |
A semiconductor device and a fabrication method thereof that can improve performance and reliability by restricting the generation of a hot carrier effect is disclosed. Such a semiconductor device includes: a semiconductor substrate; a gate insulating layer formed on the semiconductor substrate; a-gate structure including a first gate electrode formed on the gate insulating layer and a second gate electrode formed on the first gate electrode; and conductive structures, e.g., sidewall spacers formed at the sides of the gate, electrically insulated from the first gate electrode, and electrically connected to the second gate electrode. Such a method for fabricating the semiconductor device includes: sequentially forming a gate insulating layer, a first gate electrode and a second gate electrode on a semiconductor substrate; re-oxidizing the gate insulating layer; and forming conductive spacers at the sides, respectively, of the first gate electrode and the second gate electrode.
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