| 摘要 |
A radiation detecting apparatus having an enlarged detection area and improved radiation detecting sensitivity includes a semiconductor layer formed of an n-type amorphous or polycrystal semiconductor of high specific resistance, with a mutau product (mobilityxmean life) of holes being larger than a mutau product of electrons. The semiconductor layer has a surface electrode formed on one surface thereof to which a negative bias voltage is applied, and a carrier collection electrode formed on the other surface. The semiconductor layer provides an electronic injection inhibiting structure on the surface electrode side thereof, and a hole injection permitting structure on the carrier collection electrode side. In time of detecting radiation, electrons which are majority carriers are not injected from the surface electrode side into the semiconductor layer, while holes which are minority carriers are injected from the carrier collection electrode side. As a result, sensitivity is improved by a degree corresponding to the holes injected. The amorphous or polycrystal semiconductor layer realizes an increased area.
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