发明名称 METHOD FOR FORMING METAL LINE USING ELECTROLESS PLATING
摘要 PURPOSE: A method for forming a metal line using electroless plating is provided to improve quality of a plating layer by forming uniformly catalytic metal cores on a diffusion barrier. CONSTITUTION: An insulating layer pattern(12) is formed on a semiconductor substrate(10) in order to define a hole. A diffusion barrier(20) is formed on the semiconductor substrate(10) including the hole. A preprocess is performed on a surface of the diffusion barrier(20). A plurality of catalytic metal cores(42) are formed on the diffusion barrier(20) by performing an activation process for the surface of the diffusion barrier(20). The catalytic metal cores(42) are formed with Pd, Pt, Au or Ag. An electroless plating layer is formed on the diffusion barrier(20). The remaining diffusion barrier(20) and the electroless plating layer except for the diffusion barrier(20) and the electroless plating layer of the inside of the hole are removed by performing a CMP process. An electroless plating layer pattern(44a) is formed on the inside of the hole.
申请公布号 KR20030017694(A) 申请公布日期 2003.03.04
申请号 KR20010050322 申请日期 2001.08.21
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HONG, SEOK U;KIM, MIN;PARK, JONG WAN;SHIN, CHANG HUI
分类号 H01L21/288;H01L21/768;(IPC1-7):H01L21/288 主分类号 H01L21/288
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