发明名称 |
Process for preparing a polycrystalline silicon thin film |
摘要 |
The present invention relates to a process for preparing a polycrystalline silicon thin film comprising a step of microwave annealing and crystallization of an amorphous thin film of silicon semiconductor, silicon semiconductor added with impurities, IV family semiconductor comprising Si alloy such as Si1-xGex, III-V family and II-VI family semiconductor. The process for preparing polycrystalline silicon thin film of the present invention comprises the steps of: immersing a washed substrate into a deposition equipment and heating the substrate; depositing an amorphous or microcrystalline silicon thin film on the substrate; and, annealing the deposited thin film employing microwave for crystallization.
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申请公布号 |
US6528361(B1) |
申请公布日期 |
2003.03.04 |
申请号 |
US20000639212 |
申请日期 |
2000.08.14 |
申请人 |
KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY |
发明人 |
AHN BYUNG-TAE;KIM DO-KYUNG;KIM JONG-HEE;LEE JEONG-NO;KIM YOON-CHANG |
分类号 |
H01L29/786;C23C16/56;H01L21/20;(IPC1-7):H01L21/008;H01L21/203 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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