发明名称 |
Semiconductor integrated circuit |
摘要 |
A semiconductor integrated circuit of the present invention has a CMOS circuit 1 composed of a first MOSFET and a switch 2 composed of a second MOSFET which are connected in series. Then, a circuit-driving voltage and a switch-driving voltage are applied independently to the CMOS circuit 1 and the switch 2. The switch-driving voltage is larger than the circuit-driving voltage.
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申请公布号 |
US6529042(B1) |
申请公布日期 |
2003.03.04 |
申请号 |
US20000548658 |
申请日期 |
2000.04.13 |
申请人 |
UNIVERSITY OF TOKYO |
发明人 |
HIRAMOTO TOSHIRO;SAKURAI TAKAYASU;INUKAI TAKASHI |
分类号 |
H01L21/8238;H01L27/092;H03K17/04;H03K17/16;H03K17/687;H03K19/00;(IPC1-7):H03K19/094 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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