发明名称 Semiconductor integrated circuit
摘要 A semiconductor integrated circuit of the present invention has a CMOS circuit 1 composed of a first MOSFET and a switch 2 composed of a second MOSFET which are connected in series. Then, a circuit-driving voltage and a switch-driving voltage are applied independently to the CMOS circuit 1 and the switch 2. The switch-driving voltage is larger than the circuit-driving voltage.
申请公布号 US6529042(B1) 申请公布日期 2003.03.04
申请号 US20000548658 申请日期 2000.04.13
申请人 UNIVERSITY OF TOKYO 发明人 HIRAMOTO TOSHIRO;SAKURAI TAKAYASU;INUKAI TAKASHI
分类号 H01L21/8238;H01L27/092;H03K17/04;H03K17/16;H03K17/687;H03K19/00;(IPC1-7):H03K19/094 主分类号 H01L21/8238
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