| 摘要 |
The present invention is intended to improve the linear response characteristics of resistance changes to the magnetic field. According to the present invention, an MR sensing element 10 comprises a sensing pattern 12 consisting of a magnetoresistive layer whose resistance changes in accordance with the direction of magnetization M, and an electrode layer for applying a sense current J to the sensing pattern 12. The sensing pattern 12 is formed to be of circular shape. According to the present invention, since the demagnetic field within the sensing pattern is made constant with respect to the direction of the magnetization M, the improved linear response characteristics of resistance changes to an external magnetic field Hs can be realized.
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