发明名称 Dicing configuration for separating a semiconductor component from a semiconductor wafer
摘要 The dicing configuration for separating a semiconductor component from a semiconductor wafer is formed with a rupture joint which is created together with connecting holes that interconnect metallization planes, in a transition area between a scribe line and the semiconductor component. The rupture joint is an additional recess with which the insulating layer is made thinner.
申请公布号 US6528392(B2) 申请公布日期 2003.03.04
申请号 US20000745541 申请日期 2000.12.21
申请人 INFINEON TECHNOLOGIES AG 发明人 FEURLE ROBERT;SAVIGNAC DOMINIQUE
分类号 H01L21/301;H01L23/31;(IPC1-7):H01L21/78 主分类号 H01L21/301
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